Filling in the missing link: monolithic optical isolators on silicon with high performance, broadband operation, and polarization diversity
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112891L.pdf
Description
Published version
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656.95 KB
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Adobe PDF
Checksum (MD5)
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Author(s)
Hu, Juejun
Du, Qingyang
Fakhrul, Takian
Zhang, Yifei
Ross, Caroline A.
Date Issued
February 2020
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Publisher
SPIE-Intl Soc Optical Eng
Citation
Hu, Juejun et al. “Filling in the missing link: monolithic optical isolators on silicon with high performance, broadband operation, and polarization diversity.” Proceedings of SPIE, 11289, Photonic and Phononic Properties of Engineered Nanostructures X (February 2020): 112891L © 2020 The Author(s)
Version
Final published version
Abstract
On-chip optical isolators constitute an essential building block for photonic integrated circuits. Monolithic magnetooptical isolators on silicon, while featuring unique benefits such as scalable integration and processing, fully passive operation, large dynamic range, and simple device architecture, had been limited by their far inferior performances compared to their bulk counterparts. Here we discuss our recent work combining garnet material development and isolator device design innovation, which leads to a monolithic optical isolator with an unprecedented low insertion loss of 3 dB and an isolation ratio up to 40 dB. To further overcome the bandwidth and polarization limitations, we demonstrated broadband optical isolators capable of operating for both TM and TE modes. These results open up exciting opportunities for scalable integration of nonreciprocal optical devices with chip-scale photonic circuits.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
MIT Materials Research Laboratory
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1117/12.2553949
