Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites
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1504.02144.pdf
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3.66 MB
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Author(s)
Stevanović, Vladan
Ginley, David S.
Brandt, Riley E
Buonassisi, Anthony
Date Issued
June 2015
Journal
MRS Communications
Publisher
Cambridge University Press (CUP)
Citation
Brandt, Riley E. et al.“Identifying Defect-Tolerant Semiconductors with High Minority-Carrier Lifetimes: Beyond Hybrid Lead Halide Perovskites.” MRS Communications 5, 2 (May 2015): 265–275 © 2015 Materials Research Society
Version
Author's final manuscript
Abstract
The emergence of methyl-ammonium lead halide (MAPbX₃) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this “defect tolerance” emerges from fundamental electronic-structure properties, including the orbital character of the conduction and valence band extrema, the charge-carrier effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX₃. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1557/MRC.2015.26
