Multi-Inverter Discrete Backoff: A High-Efficiency, Wide-Range RF Power Generation Architecture
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Multi-Inverter Discrete Backoff - Perreault.pdf
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Author(s) • • • •
Zhang, Haoquan
Al Bastami, Anas Ibrahim
Jurkov, Alexander S.
Radomski, Aaron
Perreault, David J
Date Issued
November 2020
Journal
2020 IEEE 21st Workshop on Control and Modeling for Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Zhang, Haoquan et al. "Multi-Inverter Discrete Backoff: A High-Efficiency, Wide-Range RF Power Generation Architecture." 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics, November 2020, Aalborg, Denmark, Institute of Electrical and Electronics Engineers, November 2020. © 2020 IEEE
Version
Author's final manuscript
Abstract
Industrial radio frequency (rf) power applications, such as plasma generation, require high-frequency rf power over a wide dynamic power range and across variable load impedances. It is desired in these applications to maintain high efficiency and fast dynamic response. This paper introduces a scalable power amplifier (PA) architecture and control approach suitable for such applications. This approach, which we refer to as Multi-Inverter Discrete Backoff (MIDB), losslessly combines the outputs of paralleled switched-mode PAs, and modulates the number of active PAs to provide discrete steps in rf output voltage. It further employs outphasing among sub-groups of PAs for rapid and continuous output power control over a wide range. In doing so, the architecture can maintain high efficiency and fast rf power control across a very wide backoff range. A device selection and loss optimization method for MIDB architectures is discussed for plasma generation applications. We address the use of GaN FET-based, ZVS class-D PA units, and consider dynamic R[subscript ds],on effects and C[subscript oss] losses typical of GaN FETs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1109/compel49091.2020.9265702