Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
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ESREF2018-authorscopy.pdf
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Accepted version
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676.11 KB
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90be195769db7a35d0c3858f970486eb
Author(s)
Sasangka, W.A.
Gao, Y.
Gan, C.L.
Thompson, Carl Vernette
Date Issued
September 2018
Journal
Microelectronics Reliability
Publisher
Elsevier BV
Citation
Sasangka, W.A.et al. "Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors." Microelectronics Reliability, 88-90 (September 2018): 393-396 © 2018 Elsevier Ltd
Version
Author's final manuscript
Abstract
We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < ϕ[subscript B0] < 0.62 eV) was found to be lower than that of the good devices (ϕB0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region. Keywords: AlGaN/GaN HEMTs; Leakage current; Carbon impurities; TEM; EELS; Schottky barrier height
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-NonCommercial-NoDerivs License
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DOI of Published Version
https://doi.org/10.1016/j.microrel.2018.06.048
