Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon
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Buonassisi_Picosecond carrier.pdf
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808.14 KB
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Checksum (MD5)
22c29113ce9e978ccb1f357087436636
Author(s)
Sher, Meng-Ju
Krich, Jacob J.
Recht, Daniel
Aziz, Michael J.
Lindenberg, Aaron M.
Akey, Austin J
Winkler, Mark Thomas
Buonassisi, Anthony
Simmons, Christie B.
Date Issued
August 2014
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Sher, Meng-Ju, Christie B. Simmons, Jacob J. Krich, Austin J. Akey, Mark T. Winkler, Daniel Recht, Tonio Buonassisi, Michael J. Aziz, and Aaron M. Lindenberg. “Picosecond Carrier Recombination Dynamics in Chalcogen-Hyperdoped Silicon.” Appl. Phys. Lett. 105, no. 5 (August 4, 2014): 053905. © 2014 AIP Publishing LLC
Version
Final published version
Abstract
Intermediate-band materials have the potential to be highly efficient solar cells and can be fabricated by incorporating ultrahigh concentrations of deep-level dopants. Direct measurements of the ultrafast carrier recombination processes under supersaturated dopant concentrations have not been previously conducted. Here, we use optical-pump/terahertz-probe measurements to study carrier recombination dynamics of chalcogen-hyperdoped silicon with sub-picosecond resolution. The recombination dynamics is described by two exponential decay time scales: a fast decay time scale ranges between 1 and 200 ps followed by a slow decay on the order of 1 ns. In contrast to the prior theoretical predictions, we find that the carrier lifetime decreases with increasing dopant concentration up to and above the insulator-to-metal transition. Evaluating the material's figure of merit reveals an optimum doping concentration for maximizing performance.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity
Massachusetts Institute of Technology. Photovoltaic Research Laboratory
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4892357
