Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor
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Sood-2009-Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor.pdf
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Author(s)
Sood, Ashok K.
Richwine, Robert A.
Puri, Yash R.
DiLello, Nicole Ann
Hoyt, Judy L.
Akinwande, Tayo I.
Horn, Stuart
Balcerak, Raymond S.
Venkatasubramanian, Rama
Bulman, Gary
Date Issued
May 2009
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
Society of Photo-optical Instrumentation Engineers
Citation
Sood, Ashok K. et al. “Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor.” Infrared Technology and Applications XXXV. Ed. Bjorn F. Andresen, Gabor F. Fulop, & Paul R. Norton. Orlando, FL, USA: SPIE, 2009. 72983D-11. © 2009 SPIE
Version
Final published version
Abstract
SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1117/12.820896
