Voltage control of magnetic anisotropy in Fe films with quantum well states
Name
PhysRevB.89.174402.pdf
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498.55 KB
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Author(s)
Bauer, Uwe
Przybylski, Marek
Beach, Geoffrey Stephen
Date Issued
May 2014
Journal
Physical Review B
Publisher
American Physical Society
Citation
Bauer, Uwe, Marek Przybylski, and Geoffrey S. D. Beach. “Voltage Control of Magnetic Anisotropy in Fe Films with Quantum Well States.” Phys. Rev. B 89, no. 17 (May 2014). © 2014 American Physical Society
Version
Final published version
Abstract
The influence of a gate voltage on magnetic anisotropy is investigated in a thin Fe film epitaxially grown on a Ag(1,1,10) substrate and covered by MgO. Oscillations in step-induced magnetic anisotropy due to quantum well states (QWS) confined in the Fe film are observed and shown to persist up to room temperature at low Fe thicknesses. By systematically examining the voltage and thickness dependence of the magnetic hysteresis loop characteristics, we identify two distinct effects by which an applied voltage modifies the magnetic anisotropy. The first effect is due to voltage-induced changes to interfacial perpendicular magnetic anisotropy which, due to the vicinal geometry, leads to changes in the effective in-plane uniaxial magnetic anisotropy. A second effect is observed at lower film thicknesses and shows nonmonotonic voltage-induced effects on magnetic anisotropy. This nonmonotonic behavior coincides with the onset of significant QWS-induced effects on magnetic anisotropy and suggests a link between QWS- and voltage-induced anisotropy changes.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.89.174402
