Oxygen precipitate studies in silicon for gettering in solar cell applications
Name
1027217214-MIT.pdf
Description
Full printable version
Size
3.1 MB
Format
Adobe PDF
Checksum (MD5)
e57357b6bbc0daa52e84c554c2022af3
Author(s)
Salomon, Ashley
Advisor(s)
Lionel C. Kimerling.
Date Issued
2001
Publisher
Massachusetts Institute of Technology
Abstract
Oxygen precipitates in silicon can be used (in a process called internal gettering) as sites of heterogeneous nucleation of precipitates of iron and other transition metal that are harmful to solar cell device operation. Oxygen precipitate densities in p- (10¹⁴ boron atoms/cm³) wafers were quantified using chemical etch techniques. The precipitate densities were then used to estimate times to getter iron based on a diffusion limited precipitation model. Oxygen precipitate densities in p++ (10¹⁹ boron atoms/cm³) wafers were quantified using chemical etch techniques. High levels of boron in p++ wafers make quantifying precipitate densities particularly difficult, via etching, or other methods because precipitate densities in highly doped wafers are very high and the size of precipitates small.
Description
Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.
Cataloged from PDF version of thesis.
Includes bibliographical references (page 31).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
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