Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
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Fitzgerald_Red InGap.pdf
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1.02 MB
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Author(s)
Wang, Bing
Wang, Cong
Lee, Kwang Hong
Bao, Shuyu
Lee, Kenneth Eng Kian
Tan, Chuan Seng
Yoon, Soon Fatt
Michel, Jurgen
Fitzgerald, Eugene A
Date Issued
March 2016
Journal
Proceedings of SPIE--the Society of Photo-Optical Instrumentation Engineers
Publisher
SPIE
Citation
Wang, Bing et al. “Red InGaP Light-Emitting Diodes Epitaxially Grown on Engineered Ge-on-Si Substrates.” Edited by Heonsu Jeon, Li-Wei Tu, Michael R. Krames, and Martin Strassburg. Proceedings of SPIE, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 9768 (March 2016): 97681J. © SPIE
Version
Final published version
Abstract
The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8'' Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 10⁶ /cm² by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8″ Ge-on-Si substrates and characterized.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1117/12.2211562
