Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates
Name
Kazior-2009-Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates.pdf
Size
4.8 MB
Format
Adobe PDF
Checksum (MD5)
e8306b4753787ce32db1748a547231f4
Author(s)
Fitzgerald, Eugene A.
Bulsara, Mayank
Augendre, E.
Benaissa, L.
Daval, N.
Drazek, C.
Thompson, R.
Clark, D.
Smith, D.
Choe, M. J.
Date Issued
May 2009
Journal
IEEE International Conference on Indium Phosphide & Related Materials, 2009. IPRM '09.
Publisher
Institute of Electrical and Electronics Engineers
Citation
Kazior, T.E. et al. “Progress and challenges in the direct monolithic integration of III–V devices and Si CMOS on silicon substrates.” Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on. 2009. 100-104. © 2009 IEEE
Version
Final published version
Abstract
We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. Through optimization of device fabrication and material growth processes III-V devices with electrical performance comparable to devices grown on native III-V substrates were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). While the results presented here are for InP HBTs, our direct heterogeneously integration approach is equally applicable to other III-V electronic (FETs, HEMTs) and opto-electronic (photodiodes, VSCLS) devices and opens the door to a new class of highly integrated, high performance, mixed signal circuits.
Subjects
Monolithic integrated circuits
Silicon
Indium Phosphide
Heterojunction bipolar transistors
CMOS integrated circuits
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://dx.doi.org/10.1109/ICIPRM.2009.5012452
