Wideband enhancement of infrared absorption in a direct band-gap semiconductor by using nonabsorptive pyramids
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Chen_Wideband enhancement.pdf
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Author(s)
Dai, Weitao
Yap, Daniel
Chen, Gang
Date Issued
June 2012
Journal
Optics Express
Publisher
Optical Society of America
Citation
Dai, Weitao, Daniel Yap, and Gang Chen. “Wideband Enhancement of Infrared Absorption in a Direct Band-gap Semiconductor by Using Nonabsorptive Pyramids.” Optics Express 20.S4 (2012): A519. © 2012 OSA
Version
Final published version
Abstract
Efficient trapping of the light in a photon absorber or a photodetector can improve its performance and reduce its cost. In this paper we investigate two designs for light-trapping in application to infrared absorption. Our numerical simulations demonstrate that nonabsorptive pyramids either located on top of an absorbing film or having embedded absorbing rods can efficiently enhance the absorption in the absorbing material. A spectrally averaged absorptance of 83% is achieved compared to an average absorptance of 28% for the optimized multilayer structure that has the same amount of absorbing material. This enhancement is explained by the coupled-mode theory. Similar designs can also be applied to solar cells.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1364/OE.20.00A519
