Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics
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Grossman_Nanohole structuring.pdf
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Author(s)
Nogay, Gizem
Stuckelberger, Michael
Johlin, Eric Carl
Al-Obeidi, Ahmed F.
Buonassisi, Anthony
Grossman, Jeffrey C.
Date Issued
May 2016
Journal
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Citation
Johlin, Eric et al. “Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.” ACS Applied Materials & Interfaces 8, 24 (June 2016): 15169–15176 © 2016 American Chemical Society
Version
Author's final manuscript
Abstract
While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/ACSAMI.6B00033
