Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform
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Kimerling_Resonant-cavity-enhanced.pdf
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Author(s)
Wang, Jianfei
Hu, Juejun
Becla, Piotr
Kimerling, Lionel C.
Agarwal, Anuradha Murthy
Date Issued
June 2010
Journal
Optics Express
Publisher
Optical Society of America
Citation
Wang, Jianfei, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform.” Optics Express 18, no. 12 (June 1, 2010): 12890. © 2010 OSA
Version
Final published version
Abstract
In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9] cmHz[superscript 1/2]W[superscript −1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1364/OE.18.012890
