Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects
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Lee-2010-Low-Swing Signaling.pdf
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1001.5 KB
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Author(s)
Lee, Kyeong-Jae
Qazi, Masood
Kong, Jing
Chandrakasan, Anantha P.
Date Issued
October 2010
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Lee, Kyeong-Jae et al. “Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects.” IEEE Transactions on Electron Devices 57.12 (2010): 3418–3425. Web.© 2010 IEEE.
Version
Final published version
Abstract
In this paper, we characterize the performance of monolithically integrated graphene interconnects on a prototype 0.35-μm CMOS chip. The test chip implements an array of transmitter/receivers to analyze the end-to-end data communication on graphene wires. Large-area graphene sheets are first grown by chemical vapor deposition, which are then subsequently processed into narrow wires up to 1 mm in length. A low-swing signaling technique is applied, which results in a transmitter energy of 0.3-0.7 pJ/b·mm[superscript -1] and a total energy of 2.4-5.2 pJ/b·mm[superscript -1]. Bit error rates below 2 × 10[superscript -10] are measured using a 2[superscript 31] - 1 pseudorandom binary sequence. Minimum voltage swings of 100 mV at 1.5-V supply and 500 mV at 3.3-V supply have also been demonstrated. At present, the graphene wire is largely limited by its growth quality and high sheet resistance.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/ted.2010.2083667
