High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications
Name
RLE_PR_131_01_01s_07.pdf
Size
1.51 MB
Format
Adobe PDF
Checksum (MD5)
8821b037876b9087d397ae082b834c0f
Author(s)
del Alamo, Jesus A.
Bahl, Sandeep R.
Bennett, Brian B.
Greenberg, David
Azzam, Walid
Makhdumi, Shazia
Rammo, Ferase
Date Issued
1988-01-01 to 1988-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131
Description
Contains report on one research project.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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