Process-to-panel modeling of a-Si/c-Si heterojunction solar cells
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Abstract_PVSC_Low_Res_v5.pdf
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Author(s)
Chavali, Raghu V. K.
Gray, Jeffery L.
Alam, Muhammad A.
Johlin, Eric Carl
Buonassisi, Anthony
Date Issued
June 2015
Journal
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Chavali, Raghu V. K., Eric C. Johlin, Jeffery L. Gray, Tonio Buonassisi, and Muhammad A. Alam. “Process-to-Panel Modeling of a-Si/c-Si Heterojunction Solar Cells.” 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) (June 2015).
Version
Author's final manuscript
Abstract
The cell-to-panel efficiency gap observed in a-Si/c-Si heterojunction solar cells is one of the key challenges of this technology. To systematically address this issue, we describe an end-to-end modeling framework to explore the implications of process and device variation at the module level. First, a process model is developed to connect the a-Si deposition parameters to the device parameters. Next, a physics based device model is presented which captures the essential features of photo-current and diode injection current using the thermionic-diffusion theory. Using the process and device models, the effects of process conditions on cell performance are explored. Finally, the performance of the panel as a function of device and process parameters is explored to establish panel limits. The insights developed through this process-to-panel modeling framework will improve the understanding of the cell-to-panel efficiency gap of this commercially promising cell technology.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/PVSC.2015.7356126
