Monolithic on-chip nonreciprocal photonics based on magneto-optical thin films
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Author(s) • • • •
Hu, Juejun
Sun, Xueyin
Du, Qingyang
Onbasli, Mehmet Cengiz
Ross, Caroline A
Date Issued
March 2016
Journal
Proceedings of SPIE--the Society of Photo-Optical Instrumentation Engineers
Publisher
SPIE
Citation
Hu, Juejun et al. “Monolithic on-Chip Nonreciprocal Photonics Based on Magneto-Optical Thin Films.” Proceedings of SPIE, Integrated Optics: Devices, Materials, and Technologies XX, San Francisco, California, USA, March 2016, edited by Jean-Emmanuel Broquin and Gualtiero Nunzi Conti, SPIE, March 2016 © 2016 SPIE
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Final published version
Abstract
Monolithic integration of nonreciprocal optical devices on semiconductor substrates has been a long-sought goal of the photonics community. One promising route to achieve this goal is to deposit high quality magneto-optical (MO) oxide thin films directly on a semiconductor substrate. In this article, we will review our ongoing progress in material development and device engineering towards enabling a monolithically integrated, high-performance magneto-optical nonreciprocal photonics platform. In particular, we will discuss our recent work which has led to a new pulsed laser deposition (PLD) technique of Ce or Bi substituted yttrium iron garnet (YIG) thin films with reduced thermal budget, simplified growth protocols and improved magneto-optical characteristics. These materials were incorporated in monolithic resonator and interferometer based isolator devices to demonstrate on-chip optical isolation with improved device figure of merit. Challenges and opportunities for monolithic magneto-optical devices will be discussed in the context of our latest material and device performance metrics.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1117/12.2209658