Design and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structures
Name
Gassend-2010-Design and fabrication of DRIE-patterned complex needlelike silicon structures.pdf
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Author(s)
Gassend, Blaise
Velasquez-Garcia, Luis Fernando
Akinwande, Akintunde Ibitayo
Date Issued
June 2010
Journal
Journal of Microelectromechanical Systems
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gassend, Blaise Laurent Patrick, Luis Fernando Velasquez-Garcia, and Akintunde Ibitayo Akinwande. “Design and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structures.” Journal of Microelectromechanical Systems 19.3 (2010): 589–598. Web.© 2010 IEEE.
Version
Final published version
Abstract
This paper reports the design and fabrication of high-aspect-ratio needlelike silicon structures that can have complex geometry. The structures are hundreds of micrometers tall with submicrometer-sharp protrusions, and they are fabricated using a series of passivated and unpassivated deep reactive-ion etching (DRIE) steps. A simple model is presented to predict the geometry of the structure based on the etch mask and the etch sequence. Model predictions are in good qualitative agreement with fabrication results, making it a useful design tool. The model is compared with literature reports on tapered DRIE.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/JMEMS.2010.2042680
