Modeling the point-spread function in helium-ion lithography
Name
Berggren-Modeling the point.pdf
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1.01 MB
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Author(s)
Winston, Donald
Ferrera, J.
Battistella, L.
Vladar, A. E.
Berggren, Karl K.
Date Issued
September 2011
Journal
Scanning
Publisher
Wiley Blackwell
Citation
Winston, Donald et al. “Modeling the Point-Spread Function in Helium-Ion Lithography.” Scanning 34.2 (2012): 121–128.
Version
Author's final manuscript
Abstract
We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary electron (SE) yield in helium-ion microscopy. This approach traces along SRIM-produced helium-ion trajectories, generating and simulating trajectories for SEs using a Monte Carlo method. We found, both through simulation and experiment, that the spatial distribution of energy deposition in a resist as a function of radial distance from beam incidence, i.e. the point spread function, is not simply a sum of Gauss functions.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike 3.0
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1002/sca.20290
