Simulation Tools for Digital LSI Design
Name
MIT-LCS-TR-304.pdf
Size
5.84 MB
Format
Adobe PDF
Checksum (MD5)
5e31c8635425b14e203d43760840717c
Author(s)
Terman, Christopher J.
Advisor(s)
Ward, Stephen A.
Date Issued
September 1983
Series/Report no.
MIT-LCS-TR-304
Abstract
This thesis proposes a timing simulator (RSIM) based on a uniquely simple transistor model. RSIM allows a designer to determine both the functional and approximate timing characteristics of a MOS network with more accuracy than gate-level simulation, and using larger circuits than are accommodated by circuit analysis programs. In RSIM, transistors are modeled as resistors; the logic states of a transistor's terminal nodes determine its effective resistance.
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