Magnetic proximity effect and interlayer exchange coupling of ferromagnetic/topological insulator/ferromagnetic trilayer
Name
PhysRevB.91.014427.pdf
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1.13 MB
Format
Adobe PDF
Checksum (MD5)
45d2ac391d271ce798edb3b0755d0151
Author(s)
Li, Mingda
Cui, Wenping
Yu, Jin
Dai, Zuyang
Wang, Zhe
Katmis, Ferhat
Guo, Wanlin
Moodera, Jagadeesh
Date Issued
January 2015
Journal
Physical Review B
Publisher
American Physical Society
Citation
Li, Mingda, Wenping Cui, Jin Yu, Zuyang Dai, Zhe Wang, Ferhat Katmis, Wanlin Guo, and Jagadeesh Moodera. “Magnetic Proximity Effect and Interlayer Exchange Coupling of Ferromagnetic/topological Insulator/ferromagnetic Trilayer.” Phys. Rev. B 91, no. 1 (January 2015). © 2015 American Physical Society
Version
Final published version
Abstract
The magnetic proximity effect between the topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly challenging. We theoretically investigate the interlayer exchange coupling of two FMIs separated by a TI thin film, and show that the particular electronic states of the TI contributing to the proximity effect can be directly identified through the coupling behavior between two FMIs, together with a tunability of the coupling constant. Such an FMI/TI/FMI structure not only serves as a platform to clarify the magnetic structure of the FMI/TI interface, but also provides insights in designing the magnetic storage devices with ultrafast response.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.91.014427
