Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride
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Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride.pdf
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Author(s) • • • • • • • • •
Tran, Toan Trong
Elbadawi, Christopher
Totonjian, Daniel
Lobo, Charlene J.
Grosso, Gabriele
Moon, Hyowon
Englund, Dirk R.
Ford, Michael J.
Aharonovich, Igor
Toth, Milos
Date Issued
August 2016
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Tran, Toan Trong et al. “Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride.” ACS Nano 10, 8 (August 2016): 7331–7338 © 2016 American Chemical Society
Version
Original manuscript
Abstract
Hexagonal boron nitride (hBN) is an emerging two-dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report two approaches for engineering quantum emitters in hBN multilayers using either electron beam irradiation or annealing and characterize their photophysical properties. The defects exhibit a broad range of multicolor room-temperature single photon emissions across the visible and the near-infrared spectral ranges, narrow line widths of sub-10 nm at room temperature, and a short excited-state lifetime, and high brightness. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute a step toward deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1021/acsnano.6b03602