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Processing and properties of ytterbium-erbium silicate thin film gain media

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Author(s)
Vanhoutte, Michiel
•
Wang, Bing
•
Michel, Jurgen
•
Kimerling, Lionel C.
Date Issued
September 2009
Journal
Proceedings of the 6th IEEE International Conference on Group IV Photonics, 2009 (GFP '09)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Vanhoutte, Michiel et al. “Processing and properties of ytterbium-erbium silicate thin film gain media.” IEEE, 2009. 63-65. © Copyright 2009 IEEE
Version
Final published version
Abstract
The structural and photoluminescence properties of ytterbium-erbium silicate thin films have been investigated. The films were fabricated by RF-magnetron co-sputtering of Er[subscript 2]O[subscript 3], Yb[subscript 2]O[subscript 3] and SiO[subscript 2] on c-Si and subsequent annealing in N[subscript 2] or O[subscript 2] atmosphere.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/73453
DOI of Published Version
https://doi.org/10.1109/GROUP4.2009.5338289
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