Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices
Name
Rollo_SISPAD2019.pdf
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716.6 KB
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Adobe PDF
Checksum (MD5)
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Author(s)
Rollo, T.
Daniel, Luca
Esseni, D.
Date Issued
October 2019
Journal
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Rollo, T. et al. "Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices." 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), September 2019, Udine, Italy, October 2019. © 2019 IEEE
Version
Author's final manuscript
Abstract
In recent years electron devices based on ferroelectric materials have attracted a lot of interest well beyond FeRAM memories. Negative capacitance transistors (NC-FETs) have been investigated as steep slope transistors [1], [2], and Ferroelectric FETs (Fe-FETs) are under intense scrutiny also as synaptic devices for neuromorphc computing, where the minor loops in ferroelectrics can allow to achieve multiple values of conductance in read mode [3], [4], [5]. Furthermore, the persistence of ferroelectricity in ultra-thin ferroelectric layers paved the way to ferroelectric tunnelling junctions [6], where a polarization dependent tunneling current can be exploited to realize high impedance memristors, amenable for ultra power-efficient and thus massive parallel computation.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/sispad.2019.8870373
