Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy
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IMST028.pdf
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Author(s)
Sun, Z. Z.
Yoon, Soon Fatt
Yew, K. C.
Bo, B. X.
Yan, Du An
Tung, Chih-Hang
Date Issued
January 2005
Series/Report no.
Innovation in Manufacturing Systems and Technology (IMST);
Abstract
We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.
Subjects
Gallium Arsenide Nitride
continuous-wave lasers
quantum dot structures
Arsenic
Gallium Arsenide
GaAsN barrier layer
Gallium Indium Nitride Arsenide
Nitrogen
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