Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors
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Guo_Lu_EDL 2015.pdf
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Author(s)
Guo, Luke W.
Bennett, Brian R.
Boos, John Brad
Del Alamo, Jesus A.
Lu, Wenjie
del Alamo, Jesus A.
Date Issued
May 2015
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Guo, Luke W., Wenjie Lu, Brian R. Bennett, John Brad Boos, and Jesus A. Del Alamo. “Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors.” IEEE Electron Device Letters 36, no. 6 (June 2015): 546–548.
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Author's final manuscript
Abstract
We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p[superscript ±]-InAs/InAsSb cap structure. The incorporation of a p[superscript ±]-InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic scheme, the composite cap structure resulted in a 4x reduction in contact resistance compared with a standard p[superscript ±]-InAs cap. This translates into nearly 3x improvement in the gm of fabricated InGaSb p-channel QW-FETs. Furthermore, Ni contacts on the composite cap were fabricated and a contact resistance of 45 Ω · μm was obtained. An accurate contact resistivity extraction in this very low range is possible through nanotransmission line models with sub-100 nm contacts. In devices of this kind with Ni-based contacts, we derive an ultralow contact resistivity of 5.2 · 10[superscript -8] Ω · cm[superscript 2].
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1109/LED.2015.2421337
