High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
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Fitzgerald_High mobility.pdf
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Author(s)
Yang, Li
Cheng, Cheng-Wei
Bulsara, Mayank
Fitzgerald, Eugene A.
Date Issued
May 2012
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Yang, Li, Cheng-Wei Cheng, Mayank T. Bulsara, and Eugene A. Fitzgerald. “High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures.” Journal of Applied Physics 111, no. 10 (2012): 104511. © 2012 American Institute of Physics
Version
Final published version
Abstract
In this paper, we demonstrate high electron mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor(MOSFET)structures. The Al[subscript 2]O[subscript 3] (gate dielectric)/In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As (barrier)/In[subscript 0.53]Ga[subscript 0.47]As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situchemical vapor deposition(CVD)Al[subscript 2]O[subscript 3] displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al[subscript 2]O[subscript 3], which indicates that CVD process resulted in a lower Al[subscript 2]O[subscript 3]/In[subscript 0.53]Ga[subscript 0.47]As interfacial defect density. A gate bias was applied to the structure with CVDAl[subscript 2]O[subscript 3], and a peak mobility of 9243 cm[superscript 2]/V s at a carrier density of 2.7 × 10[superscript 12] cm[superscript −2] was demonstrated for the structure with a 4 nm In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In[subscript 0.53]Ga[subscript 0.47]As MOSFETstructures.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1063/1.4721328
