Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
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Buonassisi_Reactivation of sub.pdf
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Author(s)
Newman, Bonna Kay
Buonassisi, Tonio
Sher, Meng-Ju
Mazur, Eric
Date Issued
June 2011
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Newman, Bonna K. et al. “Reactivation of Sub-bandgap Absorption in Chalcogen-hyperdoped Silicon.” Applied Physics Letters 98.25 (2011): 251905. © 2011 American Institute of Physics
Version
Final published version
Abstract
Silicon doped with nonequilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K and that the absorption deactivation correlates with chalcogen diffusivity. In this work, we show that sub-bandgap absorptance can be reactivated by annealing at temperatures between 1350 and 1550 K followed by fast cooling (>50 K/s). Our results suggest that the defects responsible for sub-bandgap absorptance are in equilibrium at high temperatures in hyperdoped Si:chalcogen systems.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1063/1.3599450
