Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps
Name
26912439-MIT.pdf
Description
Full printable version
Size
21.12 MB
Format
Adobe PDF
Checksum (MD5)
745b3e2088c8c11a75e85dc68b114aa7
Author(s)
Tewksbury, Theodore L. (Theodore Locke)
Advisor(s)
Hae-Seung Lee.
Date Issued
1992
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.
Includes bibliographical references (p. 299-317).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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