Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures
Name
1710.01233.pdf
Description
Submitted version
Size
1.26 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Zhao, Zhibo
Singh, Akshay
Chesin, Jordan
Armitage, Rob
Wildeson, Isaac
Deb, Parijat
Armstrong, Andrew
Kisslinger, Kim
Stach, Eric A
Gradečak, Silvija
Date Issued
2019
Journal
Applied Physics Express
Publisher
Japan Society of Applied Physics
Version
Original manuscript
Abstract
© 2019 The Japan Society of Applied Physics. Commercial InGaN/GaN light emitting diodes continue to suffer from efficiency droop at high current densities, and urgently require enhanced structural-optical toolsets for active region characterization. In our work, we measure delayed (tens of seconds) cathodoluminescence which is influenced by carrier transport and deep level defects. Further, we observe that drops in efficiency are not correlated with quantum well (QW) width fluctuations. To explain the rise dynamics, we propose a model involving filling of deep level defects and simultaneous reduction of built-in field within the multi-QW active region. These measurements yield insights into carrier transport, efficiency-reducing defects, and QW band structure.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.7567/1882-0786/AB0341
