Remote epitaxy of III-N membranes on amorphous boron nitride
Name
1252630860-MIT.pdf
Size
2.81 MB
Format
Adobe PDF
Checksum (MD5)
44451e7049425e0341b6cd05d248d6bc
Author(s)
Liu, Yunpeng(Mechanical engineer)Massachusetts Institute of Technology.
Advisor(s)
Jeehwan Kim.
Date Issued
2021
Publisher
Massachusetts Institute of Technology
Abstract
Amorphous boron nitride (aBN) has found broad applications in industrial applications. Thick aBN has been thoroughly investigated¹,², including the recent revisiting of this material at nanometer thickness. However, most investigations of aBN so far have been based on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial membrane quality is improved. Multi-stacking technique is developed to further enhance the manufacturing efficiency of the free-standing GaN film. Surface acoustic wave (SAW) strain sensor fabricated by free-standing ultrathin single crystalline GaN film shows good performances. Process to solve GaN device heat dissipation is presented. Relaxed InGaN film grown on aBN monolayer provides a new research direction for GaN based red LED.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, February, 2021
Cataloged from the official PDF version of thesis.
Includes bibliographical references (pages 35-37).
Subjects
Mechanical Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.
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