Enhanced Magneto-optic Kerr Effect and Magnetic Properties of CeY[subscript 2]Fe[subscript 5]O[subscript 12] Epitaxial Thin Films
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PhysRevApplied.4.014008.pdf
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Author(s)
Kehlberger, Andreas
Richter, Kornel
Onbasli, Mehmet Cengiz
Jakob, Gerhard
Kim, Dong Hun
Goto, Taichi
Ross, Caroline A.
Kuschel, Timo
Gotz, Gerhard
Klaui, Mathias
Date Issued
July 2015
Journal
Physical Review Applied
Publisher
American Physical Society
Citation
Kehlberger, Andreas, Kornel Richter, Mehmet C. Onbasli, Gerhard Jakob, Dong Hun Kim, Taichi Goto, Caroline A. Ross, et al. “Enhanced Magneto-Optic Kerr Effect and Magnetic Properties of CeY[subscript 2]Fe[subscript 5]O[subscript 12] Epitaxial Thin Films.” Physical Review Applied 4, no. 1 (July 20, 2015). © 2015 American Physical Society
Version
Final published version
Abstract
The magnetic and magneto-optic properties of epitaxial CeY[subscript 2]Fe[subscript 5]O[subscript 12] (Ce ∶ YIG) and Y[subscript 3]Fe[subscript 5]O[subscript 12] (yttrium iron garnet or YIG) thin films grown by pulsed laser deposition on gadolinium gallium garnet substrates are determined. An enhanced Faraday effect is known to result from Ce substitution into the yttrium iron garnet lattice, and here we characterize the magneto-optic Kerr effect, as well as the magnetic hysteresis and ferromagnetic resonance response that result from the Ce substitution. X-ray diffraction analysis reveals a high crystallographic quality for the Ce ∶ YIG films. Measurements of the magneto-optic Kerr effect for two different wavelengths demonstrate that the Ce ∶ YIG exhibits an up-to-tenfold increase in Kerr rotation compared to YIG. The Ce ∶ YIG has a slightly larger magnetic moment, as well as increased magnetic damping and higher magnetic anisotropy compared to YIG with a dependence on the crystalline orientation. By specific cerium substitution in YIG, our results show that the engineering of a large Kerr effect and tailored magnetic anisotropy becomes possible as required for magneto-optically active spintronic devices.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1103/PhysRevApplied.4.014008
