The effect of sub-oxide phases on the transparency of tin-doped gallium oxide
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Author(s)
Lim, K.
Schelhas, L. T.
Zakutayev, A.
Lany, S.
Gorman, B.
Sun, C. J.
Ginley, D.
Toney, M. F.
Siah, Sin Cheng
Brandt, Riley E
Date Issued
October 2016
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Lim, K. et al. “The Effect of Sub-Oxide Phases on the Transparency of Tin-Doped Gallium Oxide.” Applied Physics Letters 109, 14 (October 2016): 141909 © 2016 The Author(s)
Version
Final published version
Abstract
There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOxphases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1063/1.4964638
