High-speed modulator with interleaved junctions in zero-change CMOS photonics
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Ram_High-speed.pdf
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1.73 MB
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Author(s)
Alloatti, Luca
Cheian, Dinis
Ram, Rajeev J
Date Issued
March 2016
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Alloatti, L. et al. “High-Speed Modulator with Interleaved Junctions in Zero-Change CMOS Photonics.” Applied Physics Letters 108, 13 (March 2016): 131101 © 2016 AIP Publishing
Version
Final published version
Abstract
A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4944999
