A Basic Isolated Half-Bridge Silicon Carbide Gate Driver for Electric and Hybrid Electric Vehicles
Name
Hidalgo-nancyhid-meng-eecs-2022-thesis.pdf
Description
Thesis PDF
Size
3.23 MB
Format
Adobe PDF
Checksum (MD5)
f10539e8bd260ce8a0e1ccc675e5b9db
Author(s)
Hidalgo, Nancy Yahel
Advisor(s)
Yun, Ruida
Perreault, David
Date Issued
February 2022
Publisher
Massachusetts Institute of Technology
Abstract
A Basic, Isolated, Half-Bridge Silicon Carbide Gate Driver was designed and validated using Cadence and SPICE. The architectures of similar gate drivers were studied and simplified to reduce the total area of the gate driver. The fabrication process was also carefully selected to minimize the total area. The gate driver architecture consisted of various analog and mixed signal subcircuits including floating voltage rail generators, inverter chains, and an on-off key receiver among others. Extensive simulations were performed in SPICE and Cadence to analyze the gate driver behavior for various temperature conditions, operating voltages, load conditions, and process corners. The final product was able to drive 6 amps of peak output current, with 10 nanoseconds of propagation delay, and with a 2 milliamp quiescent current.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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