Correlation of doping, structure, and carrier dynamics in a single GaN nanorod
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Gradecak_Correlation of doping.pdf
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2.62 MB
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Adobe PDF
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Author(s)
Zhou, Xiang
Lu, Ming-Yen
Lu, Yu-Jung
Gwo, Shangjr
Gradecak, Silvija
Date Issued
June 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Zhou, Xiang, Ming-Yen Lu, Yu-Jung Lu, Shangjr Gwo, and Silvija Gradečak. “Correlation of doping, structure, and carrier dynamics in a single GaN nanorod.” Applied Physics Letters 102, no. 25 (2013): 253104. © 2013 AIP Publishing LLC
Version
Final published version
Abstract
We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine p-n junction position and minority carrier diffusion lengths of 650 nm and 165 nm for electrons and holes, respectively. Temperature-dependent CL study reveals an activation energy of 19 meV for non-radiative recombination in Mg-doped GaN nanorods. These results directly correlate doping, structure, carrier dynamics, and optical properties of GaN nanostructure, and provide insights for device design and fabrication.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4812241
