High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
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AMMNS008.pdf
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Checksum (MD5)
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Author(s)
Wang, Yadong
Zang, Keyan
Chua, Soo-Jin
Fonstad, Clifton G. Jr.
Date Issued
January 2005
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.
Subjects
gallium nitride
silicon dioxide
nanodot arrays
template-assisted selective growth
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