High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
Name
High_Temperature_Robustness_of_GIT_WIPDA_2022.pdf
Size
3.88 MB
Format
Adobe PDF
Checksum (MD5)
64a71ee6c8b2ef089bea0c88b5b8c538
Author(s)
Yuan, Mengyang
Xie, Qingyun
Niroula, John
Isamotu, Mohamed Fadil
Rajput, Nitul S.
Chowdhury, Nadim
Palacios, Tomas
Date Issued
November 7, 2022
Journal
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Publisher
IEEE
Citation
Yuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S. et al. 2022. "High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology." 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Version
Author's final manuscript
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/wipda56483.2022.9955304
