Far-IR reflectance spectra analysis of CdZnTe and related materials
Name
Yang-2009-Far-IR reflectance spectra analysis of CdZnTe and related materials.pdf
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Author(s)
Becla, Piotr
Feng, Zhe Chuan
Tien, Der-Chi
Yang, Yu-Chang
Hou, Fu-Chung
Shih, Yen-Hao
Jhang, Sheng-Hong
Yang, Tzuen-Rong
Date Issued
September 2009
Journal
Proceedings of SPIE
Publisher
The International Society for Optical Engineering
Citation
Yang, Tzuen-Rong et al. “Far-IR reflectance spectra analysis of CdZnTe and related materials.” Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI. Ed. Ralph B. James, Larry A. Franks, & Arnold Burger. San Diego, CA, USA: SPIE, 2009. 74490L-9. © 2009 SPIE--The International Society for Optical Engineering
Version
Final published version
Abstract
Far-infrared (FIR) reflectance spectroscopy has been employed to study the optical properties for a series of bulk CdZnxTe1-x and CdSexTe1-x wafers. The zone-centre optical phonons for the ternary alloys show a variety of behavior patterns: they exhibit a "one-mode", "two-mode" or "intermediate-mode" behavior depending on the vibration characteristics of the end binary members. The CdSeTe called CST were found to be single-crystal with the zincblende structure. These four samples labeled with CST5, CST15, CST25, and CST35, which correspond with the composition of Se, 5%, 15%, 25%, 35%, respectively. The intensity of CdTe-like TO band decays with x increasing, and the peak position increases from 140 cm[superscript -1] to 145 cm[superscript -1]. In the other hand, the intensity of CdSe-like TO band grows with x increasing, and the peak position of CdSe-like TO band increases from 174 cm[superscript -1] to 181 cm[superscript -1]. We use the model of dielectric function and using Least-Square fit to find the optical and transport parameters. By the infrared spectra analysis, we found the conductivity of CdZn[subscript x]Te[subscript 1-x] increase with increasing of x value and the conductivity of CdZn[subscript x]Te[subscript 1-x] decrease with increasing of x value.
MIT Department
MIT Materials Research Laboratory
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
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DOI of Published Version
http://dx.doi.org/10.1117/12.825874
