Additive manufacturing of patterned 2D semiconductor through recyclable masked growth
Name
3437.full.pdf
Description
Published version
Size
1.5 MB
Format
Adobe PDF
Checksum (MD5)
9a7767f94749fdd679f8b27c1b6be3a5
Author(s)
Guo, Yunfan
Su, Cong
Shen, Pin-Chun
Lu, An
Hempel, Marek
Han, Yimo
Ji, Qingqing
Lin, Yuxuan
Shi, Enzheng
McVay, Elaine D.
Date Issued
February 12, 2019
Journal
Proceedings of the National Academy of Sciences
Publisher
National Academy of Sciences (U.S.)
Citation
Guo, Yunfan et al. "Additive manufacturing of patterned 2D semiconductor through recyclable masked growth." Proceedings of the National Academy of Sciences 116, 9 (February 2019): 3437-3442 © 2019 National Academy of Sciences
Version
Final published version
Abstract
The 2D van der Waals crystals have shown great promise as potential future electronic materials due to their atomically thin and smooth nature, highly tailorable electronic structure, and mass production compatibility through chemical synthesis. Electronic devices, such as field effect transistors (FETs), from these materials require patterning and fabrication into desired structures. Specifically, the scale up and future development of “2D”-based electronics will inevitably require large numbers of fabrication steps in the patterning of 2D semiconductors, such as transition metal dichalcogenides (TMDs). This is currently carried out via multiple steps of lithography, etching, and transfer. As 2D devices become more complex (e.g., numerous 2D materials, more layers, specific shapes, etc.), the patterning steps can become economically costly and time consuming. Here, we developed a method to directly synthesize a 2D semiconductor, monolayer molybdenum disulfide (MoS₂), in arbitrary patterns on insulating SiO₂/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineering. This method shows the potential of using the prepatterned substrates as a master template for the repeated growth of monolayer MoS₂ patterns. Our technique currently produces arbitrary monolayer MoS₂ patterns at a spatial resolution of 2 μm with excellent homogeneity and transistor performance (room temperature electron mobility of 30 cm²V⁻¹s⁻¹ and on–off current ratio of 10⁷. Extending this patterning method to other 2D materials can provide a facile method for the repeatable direct synthesis of 2D materials for future electronics and optoelectronics. Keywords: 2D semiconductor; monolayer MoS₂; patterned growth; growth mechanism; recyclable; masked growth
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1073/pnas.1816197116
