6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

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Author(s)
Del Alamo, Jesus
•
Tuller, Harry L.
Alternative Title
Integrated Microelectronic Devices
Date Issued
December 2002
Abstract
The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project.
Subjects
integrated microelectronic devices
physics
silicon
circuit
semiconductor
p-n junction
metal-oxide semiconductor structure
metal-semiconductor junction
MOS field-effect transistor
bipolar junction transistor
energy band diagram
short-channel MOSFET
device characterization
device design
6.720J
3.43J
6.720
3.43
Microelectronics
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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