6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

Del Alamo, Jesus; Tuller, Harry L.

6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

Name

6-720JFall-2002/OcwWeb/Electrical-Engineering-and-Computer-Science/6-720JIntegrated-Microelectronic-DevicesFall2002/CourseHome/index.htm

Size

15.21 KB

Format

HTML

Checksum (MD5)

176190f0bdbe3a6040092416b469f9cc

Author(s)

Del Alamo, Jesus

•

Tuller, Harry L.

Alternative Title

Integrated Microelectronic Devices

Date Issued

December 2002

Abstract

The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project.

Subjects

integrated microelectronic devices

physics

silicon

circuit

semiconductor

p-n junction

metal-oxide semiconductor structure

metal-semiconductor junction

MOS field-effect transistor

bipolar junction transistor

energy band diagram

short-channel MOSFET

device characterization

device design

6.720J

3.43J

6.720

3.43

Microelectronics

MIT Department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science

Massachusetts Institute of Technology. Department of Materials Science and Engineering

Terms of Use

Persistent DSpace Link

http://hdl.handle.net/1721.1/46331