High thermoelectric performance by resonant dopant indium in nanostructured SnTe
Name
Chen-2013-High thermoelectric performance by resonant dopant indium in nanostructured SnTe.pdf
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1.17 MB
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Author(s)
Liao, Bolin
Esfarjani, Keivan
Chen, Gang
Zhang, Qian
Lan, Yucheng
Lukas, Kevin
Liu, Weishu
Opeil, Cyril
Broido, David
Ren, Zhifeng
Date Issued
July 2013
Journal
Proceedings of the National Academy of Sciences
Publisher
National Academy of Sciences (U.S.)
Citation
Zhang, Q., B. Liao, Y. Lan, K. Lukas, W. Liu, K. Esfarjani, C. Opeil, D. Broido, G. Chen, and Z. Ren. “High Thermoelectric Performance by Resonant Dopant Indium in Nanostructured SnTe.” Proceedings of the National Academy of Sciences 110, no. 33 (August 13, 2013): 13261–13266.
Version
Final published version
Abstract
From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the first-principles simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ~1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1073/pnas.1305735110
