Fabrication of graphene-on-GaN vertical transistors
Name
899998881-MIT.pdf
Description
Full printable version
Size
8.69 MB
Format
Adobe PDF
Checksum (MD5)
e1083b55e51d9fb6094ca10ab5da2b2d
Author(s)
Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology
Advisor(s)
Tomás Palacios and Mildred S. Dresselhaus.
Date Issued
2014
Publisher
Massachusetts Institute of Technology
Abstract
The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Bibliographical references 35-37 missing from the bibliography. Cataloged from PDF version of thesis.
Includes bibliographical references (pages 61-[64]).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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