Design, fabrication and characterization of terahertz quantum-well photodetectors
Name
862110506-MIT.pdf
Description
Full printable version
Size
15.81 MB
Format
Adobe PDF
Checksum (MD5)
9ea6836a6fc955149f6cd9d94779e827
Author(s)
Huang, Shengxi, Ph. D. Massachusetts Institute of Technology
Advisor(s)
Qing Hu.
Date Issued
2013
Publisher
Massachusetts Institute of Technology
Abstract
Terahertz (THz) photodetectors are important in the fully exploration and development of electromagnetic spectrum. However, a fast and sensitive THz photodetector ready for array integration is not available. A THz Quantum-well Photodetector (QWP) has the properties of being fast, sensitive, low-noise, and narrow-band. It is promising for large-array integration for THz imaging. In addition, a THz QWP-LED (Light-Emitting Diode) can upconvert the THz to NIR radiation and useful for THz imaging in Focal-Plane Array (FPA). In this thesis project, the theory of the intersubband transition and carrier transport in a THz QWP is studied. The designe, fabrication, measurement-system buildup, and characterization are performed. In addition, the design and fabrication process of THz QWP-LED are also carried out. Such devices have potential applications in many fields such as biology, medication and security.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 139-144).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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