A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers
Name
sciadv.abo3783.pdf
Description
Published version
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537.24 KB
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Checksum (MD5)
e4ed2f9121a4c112159ae929b671783d
Author(s)
Zhong, Yang
Zhang, Lenan
Park, Ji-Hoon
Cruz, Samuel
Li, Long
Guo, Liang
Kong, Jing
Wang, Evelyn N
Date Issued
November 16, 2022
Journal
Science Advances
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Zhong, Yang, Zhang, Lenan, Park, Ji-Hoon, Cruz, Samuel, Li, Long et al. 2022. "A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers." Science Advances, 8 (46).
Version
Final published version
Abstract
Two-dimensional (2D) materials have enabled promising applications in modern miniaturized devices. However, device operation may lead to substantial temperature rise and thermal stress, resulting in device failure. To address such thermal challenges, the thermal expansion coefficient (TEC) needs to be well understood. Here, we characterize the in-plane TECs of transition metal dichalcogenide (TMD) monolayers and demonstrate superior accuracy using a three-substrate approach. Our measurements confirm the physical range of 2D monolayer TECs and, hence, address the more than two orders of magnitude discrepancy in literature. Moreover, we identify the thermochemical electronegativity difference of compositional elements as a descriptor, enabling the fast estimation of TECs for various TMD monolayers. Our work presents a unified approach and descriptor for the thermal expansion of TMD monolayers, which can serve as a guideline toward the rational design of reliable 2D devices.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1126/sciadv.abo3783
