RF performance of short channel graphene field-effect transistor
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Antoniadis-2010-RF performance of short channel graphene.pdf
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Author(s)
Wu, Y. Q.
Lin, Y. -M.
Jenkins, K. A.
Ott, J. A.
Dimitrakopoulos, C.
Farmer, Damon B.
Xia, F.
Grill, A.
Antoniadis, Dimitri A.
Avouris, Phaedon
Date Issued
December 2010
Journal
2010 IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wu, Y.Q. et al. “RF Performance of Short Channel Graphene Field-effect Transistor.” IEEE, 2010. 9.6.1–9.6.3. Web. 1 June 2012.
Version
Final published version
Abstract
In this paper, the authors present experimental studies on transport characteristics of graphene FETs with channel lengths down to 70 nm. The factors limiting the performance of short channel graphene devices are discussed. RF performance of a sub-100 nm graphene transistor fabricated on epitaxial graphene grown on a SiC substrate is also presented. A cut-off frequency as high as 170 GHz is achieved in a 90 nm graphene FET using a scalable top-down fabrication processes. Our results indicate that further improvement of RF performance of graphene FETs can be enabled by channel length scaling with structure optimization and contact resistance reduction.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/IEDM.2010.5703331
