Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots
Name
Wang-2014-Optimal tunneling en.pdf
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494.98 KB
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146798bb3c1833170daa9da8f536335b
Author(s)
Wang, Chen
Ren, Jie
Cao, Jianshu
Date Issued
April 2014
Journal
New Journal of Physics
Publisher
Institute of Physics Publishing and Deutsche Physikalische Gesellschaft
Citation
Wang, Chen, Jie Ren, and Jianshu Cao. “Optimal Tunneling Enhances the Quantum Photovoltaic Effect in Double Quantum Dots.” New Journal of Physics 16, no. 4 (April 25, 2014): 045019.
Version
Final published version
Abstract
We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices.
MIT Department
Massachusetts Institute of Technology. Department of Chemistry
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Creative Commons Attribution
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DOI of Published Version
https://doi.org/10.1088/1367-2630/16/4/045019
