Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication
Name
Ross-2010-Templated self-assembly.pdf
Size
2.01 MB
Format
Adobe PDF
Checksum (MD5)
86be7c8e0eaa4b0ede7b2c0a98352c80
Author(s)
Ross, Caroline A.
Manners, I.
Gwyther, J.
Jung, Yeon Sik
Chuang, Vivian Peng-Wei
Son, Jeong Gon
Gotrik, Kevin W.
Mickiewicz, R. A.
Yang, Joel K. W.
Chang, J. B.
Date Issued
March 2010
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
SPIE
Citation
Ross, C. A. et al. “Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication.” Alternative Lithographic Technologies II. Ed. Daniel J. C. Herr. San Jose, California, USA: SPIE, 2010. 76370H-7. ©2010 SPIE.
Version
Final published version
Abstract
Block copolymers have been proposed for self-assembled nanolithography because they can spontaneously form well-ordered nanoscale periodic patterns of lines or dots in a rapid, low-cost process. By templating the selfassembly, patterns of increasing complexity can be generated, for example arrays of lines with bends or junctions. This offers the possibility of using a sparse template, written by electron-beam lithography or other means, to organize a dense array of nanoscale features. Pattern transfer is simplified if one block is etch resistant and one easily removable, and in this work we use a diblock copolymer or a triblock terpolymer with one Sicontaining block such as polydimethylsiloxane or polyferrocenylsilane, and one or two organic blocks such as polystyrene or polyisoprene. Removal of the organic block(s) with an oxygen plasma leaves a pattern of Sicontaining material which can be used as an etch mask for subsequent pattern transfer to make metallization lines or magnetic nanostructures with feature sizes below 10 nm and periodicity below 20 nm.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1117/12.848502
