Giant and Controllable Photoplasticity and Photoelasticity in Compound Semiconductors
Name
PhysRevLett.129.065501.pdf
Description
Published version
Size
2.08 MB
Format
Adobe PDF
Checksum (MD5)
147e20909b1818e894cbeebae742d127
Author(s)
Dong, Jiahao
Li, Yifei
Zhou, Yuying
Schwartzman, Alan
Xu, Haowei
Azhar, Bilal
Bennett, Joseph
Li, Ju
Jaramillo, R
Date Issued
2022
Journal
Physical Review Letters
Publisher
American Physical Society (APS)
Citation
Dong, Jiahao, Li, Yifei, Zhou, Yuying, Schwartzman, Alan, Xu, Haowei et al. 2022. "Giant and Controllable Photoplasticity and Photoelasticity in Compound Semiconductors." Physical Review Letters, 129 (6).
Version
Final published version
Abstract
We show that the wide-band gap compound semiconductors ZnO, ZnS, and CdS feature large photoplastic and photoelastic effects that are mediated by point defects. We measure the mechanical properties of ceramics and single crystals using nanoindentation, and we find that elasticity and plasticity vary strongly with moderate illumination. For instance, the elastic stiffness of ZnO can increase by greater than 40% due to blue illumination of intensity 1.4 mW/cm^{2}. Above-band-gap illumination (e.g., uv light) has the strongest effect, and the relative effect of subband gap illumination varies between samples-a clear sign of defect-mediated processes. We show giant optomechanical effects can be tuned by materials processing, and that processing dependence can be understood within a framework of point defect equilibrium. The photoplastic effect can be understood by a long-established theory of charged dislocation motion. The photoelastic effect requires a new theoretical framework which we present using density functional theory to study the effect of point defect ionization on local lattice structure and elastic tensors. Our results update the longstanding but lesser-studied field of semiconductor optomechanics, and suggest interesting applications.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
https://doi.org/10.1103/PHYSREVLETT.129.065501
