Highly tensile-strained Ge/InAlAs nanocomposites
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Highly tensile-strained.pdf
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1.98 MB
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Checksum (MD5)
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Author(s)
Jung, Daehwan
Faucher, Joseph
Mukherjee, Samik
Ironside, Daniel J.
Cabral, Matthew
Sang, Xiahan
Lebeau, James
Bank, Seth R.
Buonassisi, Tonio
Moutanabbir, Oussama
Date Issued
January 2017
Journal
Nature Communications
Publisher
Nature Publishing Group
Citation
Jung, Daehwan; Faucher, Joseph; Mukherjee, Samik; Akey, Austin; Ironside, Daniel J.; Cabral, Matthew and Sang, Xiahan et al. “Highly Tensile-Strained Ge/InAlAs Nanocomposites.” Nature Communications 8 (January 2017): 14204 © 2017 The Author(s)
Version
Final published version
Abstract
Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In[subscript 0.52]Al[subscript 0.48]As (InAlAs) nanocomposites by using spontaneous phase separation. Transmission electron microscopy shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs without extended defects, and Raman spectroscopy reveals a 3.8% biaxial tensile strain in the germanium nanostructures. We also show that the strain in the germanium nanostructures can be tuned to 5.3% by altering the lattice constant of the matrix material, illustrating the versatility of epitaxial nanocomposites for strain engineering. Photoluminescence and electroluminescence results are then discussed to illustrate the potential for realizing devices based on this nanocomposite material.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1038/ncomms14204
